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STB80PF55 STP80PF55
P-channel 55V - 0.016 - 80A - TO-220 - D2PAK STripFETTM II Power MOSFET
General features
Type STP80PF55 STB80PF55

VDSS 55V 55V
RDS(on) <0.018 <0.018
ID 80A 80A
3 1
1 3 2
Extremely dv/dt capability 100% avalanche tested Application oriented characterization
D2PAK
TO-220
Description
This Power MOSFET is the laest development of STMicroelectronics unique "Single feature sizeTM"strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP80PF55 STB80PF55 Marking P80PF55 B80PF55 Package TO-220 D2PAK Packaging Tube Tape & reel
September 2006
Rev. 5
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Contents
STB80PF55 - STP80PF55
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STB80PF55 - STP80PF55
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID(1) ID IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 16 80 57 320 300 2 7 1.4 -55 to 175 Unit V V A A A W W/C V/ns J C
PTOT dv/dt (3) EAS(4) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 40A, di/dt < 300 A/s, VDD=80% V(BR)DSS 4. Starting Tj=25C, ID=80A, VDD=40V
Note:
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit C/W C/W C
Table 2.
Symbol Rthj-case Rthj-a Tl
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Electrical characteristics
STB80PF55 - STP80PF55
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250mA, VGS = 0 VDS = Max rating VDS = Max rating, TC=125C VGS = 16V VDS = VGS, ID = 250A VGS = 10V, ID = 40A 2 3 Min. 55 1 10 10 4 Typ. Max. Unit V A A A V
0.016 0.018
Table 4.
Symbol gfs Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 40A VDS = 25V, f = 1MHz, VGS = 0 ID = 25A, VDD = 80V, VGS = 10V (see Figure 14) Min. Typ. 32 5500 1130 600 190 27 65 258 Max. Unit S pF pF pF nC nC nC
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STB80PF55 - STP80PF55
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD=25V, ID=40A, RG=4.7, VGS=10V (see Figure 13) VDD=25V, ID=40A, RG=4.7, VGS=10V (see Figure 13) Vclamp=40V, ID=80A, RG=4.7, VGS=10V (see Figure 13) Min. Typ. 35 190 165 80 60 40 85 Max. Unit ns ns ns ns ns ns ns
Table 6.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/s VDD = 25V, Tj =150C 110 495 9 Test condictions Min Typ. Max 10 40 1.6 Unit A A V ns C A
1. Pulse width limited by Tjmax 2. Pulsed: pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STB80PF55 - STP80PF55
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STB80PF55 - STP80PF55 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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Test circuit
STB80PF55 - STP80PF55
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load switching and diode recovery times
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STB80PF55 - STP80PF55
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB80PF55 - STP80PF55
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STB80PF55 - STP80PF55
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Revision history
STB80PF55 - STP80PF55
5
Revision history
Table 7.
Date 09-Sep-2004 12-Sep-2006
Revision history
Revision 4 5 Revalidation New template, D2PAK added Changes
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STB80PF55 - STP80PF55
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